Impedance spectroscopy of Gd-doped ceria analyzed by genetic programming (ISGP) method

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@Article{Baral:2017:SSI,
  author =       "Ashok Kumar Baral and Yoed Tsur",
  title =        "Impedance spectroscopy of Gd-doped ceria analyzed by
                 genetic programming (ISGP) method",
  journal =      "Solid State Ionics",
  volume =       "304",
  pages =        "145--149",
  year =         "2017",
  ISSN =         "0167-2738",
  DOI =          "doi:10.1016/j.ssi.2017.04.003",
  URL =          "http://www.sciencedirect.com/science/article/pii/S0167273816309419",
  abstract =     "This work presents the distribution function of
                 relaxation time (DFRT) analysis of Gd doped ceria (GDC)
                 and cobalt co-doped GDC prepared by precipitation
                 method. Ionic transport properties and grain-boundary
                 phenomena are discussed thoroughly based on the DFRT.
                 The impedance results, especially the bulk and
                 grain-boundary conductivities ( sigma b and sigma gb)
                 and activation energies (Eb and Egb) obtained from the
                 ISGP, are compared with the values obtained from the
                 Equivalent Circuit Model. Grain boundary space charge
                 (SC) effects discussed so far in the literature,
                 generally do not consider the defect interaction
                 between the oxygen vacancies and acceptor dopants in
                 ceria and other oxide ion conductors. However, ISGP
                 study clearly evidence the co-existence of SC effect
                 and defect association in grain boundary regions, and
                 both contribute to the grain boundary resistance (Rgb)
                 at lower temperatures. The effect of sintering aid (Co)
                 on the grain boundary activity is discussed considering
                 both phenomena. Lower sintering temperature of the
                 samples results in a relatively smaller grain boundary
                 potential (Phi(0)) i.e., 0.15, 0.17 and 0.19 V at 300
                 degreeC in 0, 1 and 3 molpercent Co co-doped GDC,
                 respectively.",
  keywords =     "genetic algorithms, genetic programming, Impedance
                 spectroscopy, DFRT, Grain boundary properties, Doped
                 ceria",
}

Genetic Programming entries for Baral Ashok-Kumar Yoed Tsur

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